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Infineon Technologies CY7C2263KV18-550BZXI — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C2263KV18-550BZXI Infineon QDR II+ SRAM 36Mbit 550 MHz

MPNCY7C2263KV18-550BZXI
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Infineon Technologies QDR II+ synchronous SRAM, 36Mbit (2M x 18), 550 MHz clock, 1.7V-1.9V supply, industrial temp, 165-FBGA (13x15 mm), tray.

$104.9250Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C2263KV18-550BZXI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Voltage1.7V ~ 1.9V
Frequency550 MHz
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTray
TechnologySRAM - Synchronous, QDR II+
Memory size36Mbit
Memory formatSRAM
Case165-LBGA
Memory organization2M x 18

Product details

550 MHz QDR II+ — the throughput ceiling

The CY7C2263KV18-550BZXI is a 36 Mbit synchronous SRAM using the QDR II+ architecture, clocked at 550 MHz. That clock rate sets the data-rate ceiling on the parallel interface — at 550 MHz the read and write ports each deliver a burst of two 18-bit words per cycle, so the peak bandwidth is well north of 2 GB/s. The 2M x 18 organization means the address bus is 21 bits wide; the data bus is 18 bits per port. That voltage window is tight — the board regulator needs to hold 1.8V ± 100 mV under load transients to stay inside the datasheet limits.

Package — 165-ball FBGA, 13x15 mm

The ball pitch is 0.80 mm — a 4-layer PCB with via-in-pad or microvia fan-out is typical for routing the 18-bit data buses on both ports plus the address and control lines. The tray packaging means it ships in a JEDEC-standard matrix tray for pick-and-place.

Frequently asked questions

What is the memory organization of the CY7C2263KV18-550BZXI?

It is organized as 2 Mbit x 18 — the address bus is 21 bits wide, and each of the two QDR II+ ports is 18 bits wide. Total density is 36 Mbit.