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Infineon Technologies CY7C2168KV18-550BZC — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C2168KV18-550BZC Infineon 18Mbit DDR II+ SRAM, 550 MHz

MPNCY7C2168KV18-550BZC
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Infineon Technologies CY7C2168KV18-550BZC DDR II+ synchronous SRAM, 18Mbit (1M x 18), 550 MHz, 165-FBGA (13x15 mm), 1.7V-1.9V, Tray.

$56.9360Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C2168KV18-550BZC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Voltage1.7V ~ 1.9V
Frequency550 MHz
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTray
TechnologySRAM - Synchronous, DDR II+
Memory size18Mbit
Memory formatSRAM
Case165-LBGA
Memory organization1M x 18

Product details

550 MHz DDR II+ SRAM — BOM-fit for high-throughput data paths

The CY7C2168KV18-550BZC is an 18 Mbit synchronous SRAM from Infineon, organized as 1M x 18 and clocked at 550 MHz using a DDR II+ double-data-rate interface — each clock edge transfers data, so the effective bandwidth is double the clock rate. This places it in the class of high-speed memory used in network switches, base stations, and test equipment where the processor or FPGA needs low-latency, high-bandwidth scratchpad storage without the refresh overhead of DRAM. The 1.7 V to 1.9 V core supply is a single-rail design — no separate I/O voltage — which simplifies the power tree but means the supply tolerance must be held within 200 mV across the load transient. The 165-ball FBGA package (13x15 mm body per the supplier device package) demands a controlled-impedance layout; the 0.80 mm ball pitch is routable on a standard 4-layer PCB with microvia fan-out under the BGA.

Active lifecycle — no obsolescence watch needed

The base product number CY7C2168 covers the family; the KV18-550BZC suffix encodes the 550 MHz speed grade, the 165-FBGA package, and the commercial temperature range. For extended-temperature or outdoor applications, a different speed grade or a wider-temperature SRAM family would be needed.

Package and supply — what the layout engineer needs

The 165-FBGA (13x15 mm) package is the footprint constraint. The ball map is not in this record, but the 0.80 mm pitch is standard for this density — the PCB layout should allocate at least two signal layers for fan-out, with the core supply (1.7 V to 1.9 V) decoupled with 100 nF MLCCs per quadrant near the BGA. The parallel memory interface means all 18 data lines plus address and control signals route to the controller; signal integrity at 550 MHz DDR requires matched trace lengths within 50 ps skew. The part ships in Tray packaging — not tape-and-reel — so it is suited for low-to-medium volume assembly or hand-placed prototypes. For high-volume pick-and-place, confirm the tray-to-tape conversion availability with the supplier at RFQ time.

Frequently asked questions

What is the memory organization and interface of this SRAM?

The CY7C2168KV18-550BZC is organized as 1M x 18 bits (18 Mbit total) with a parallel memory interface. It uses a DDR II+ synchronous architecture, meaning data is transferred on both clock edges at 550 MHz for an effective 1.1 G transfers per second on the data bus.