450 MHz QDR II+ SRAM — what the clock rate means for throughput
The CY7C2163KV18-450BZXI is a 18 Mbit QDR II+ synchronous SRAM from Infineon, organized as 1M x 18 and clocked at 450 MHz. QDR II+ uses separate read and write data ports, each operating at double data rate — so the 450 MHz clock delivers an effective data rate of 900 MHz per port. For a system designer, this means the memory can sustain back-to-back read and write transactions without bus-turnaround dead cycles, which is the defining advantage over common DDR SRAM architectures. The 18-bit word width is a standard data bus for high-end networking and telecom line cards where the memory stores lookup tables or packet buffers.
The 165-FBGA package (13x15 mm) has a 1.0 mm ball pitch — a standard four-layer PCB with via-in-pad can fan out the inner rows, but the layout must match the 450 MHz signal integrity requirements for the QDR II+ bus. If your existing BOM uses a different speed grade (e.g. 300 MHz or 400 MHz), the 450 MHz variant is a drop-in replacement on the same PCB layout — no board spin needed.
Active lifecycle — sourcing posture
Infineon lists the CY7C2163KV18-450BZXI as Active (current production). The base product number CY7C2163 covers multiple speed grades and temperature ranges. When ordering, confirm the full suffix — the -450BZXI variant is the 450 MHz industrial-temperature version in a 165-ball FBGA tray.