Skip to main content
Infineon Technologies CY7C1911KV18-333BZC — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1911KV18-333BZC QDR II SRAM, 18 Mbit, 333 MHz, 165-FBGA

MPNCY7C1911KV18-333BZC
Active

Infineon Technologies CY7C1911KV18-333BZC QDR II synchronous SRAM, 18 Mbit (2M x 9), 333 MHz clock, parallel interface, 1.7V–1.9V supply, 0°C–70°C, 165-FBGA (13x15 mm), tray.

$40.8800Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1911KV18-333BZC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Voltage1.7V ~ 1.9V
Frequency333 MHz
Memory interfaceParallel
Operating temperature0°C~70°C(TA)
PackageTray
TechnologySRAM - Synchronous, QDR II
Memory size18Mbit
Memory formatSRAM
Case165-LBGA
Memory organization2M x 9

Product details

333 MHz QDR II SRAM — bandwidth and bus-fit

The CY7C1911KV18-333BZC is an 18 Mbit QDR II synchronous SRAM from Infineon, organized as 2M x 9. The 333 MHz clock rate means the device delivers a peak data rate of 666 MHz on the data bus (double-data-rate on reads and writes), which is the figure that governs the throughput ceiling in a high-speed buffer or cache application. QDR II (Quad Data Rate) architecture separates the read and write data ports, eliminating the bus-turnaround penalty that standard synchronous SRAMs incur when switching between read and write cycles. For a network processor or ASIC that streams packets in and out simultaneously, this keeps the bus fully utilized.

Core supply is 1.7 V to 1.9 V (nominal 1.8 V), a narrow window that demands a clean rail — a switching regulator with <10 mV ripple is typical, and the decoupling cap placement within 2 mm of each VDD pin is standard practice for this speed grade. This limits the part to indoor, controlled-environment equipment — telecom central office, data-center line cards, or benchtop test gear. Not suitable for outdoor or extended-temperature industrial enclosures without active cooling.

Active lifecycle — no design-in risk

No pin-compatible second-source or official successor is recorded — the BOM line is single-sourced to this order code.

Frequently asked questions

What is the memory organization and interface of CY7C1911KV18-333BZC?

It is an 18 Mbit QDR II synchronous SRAM organized as 2M x 9, with a parallel interface. The 333 MHz clock delivers double-data-rate transfers on separate read and write ports.

Where can I buy CY7C1911KV18-333BZC or check stock?

This part is sourced to order through independent distribution.