144Mbit DDR II+ SRAM at 450 MHz — what it brings to the line card
The Infineon CY7C1670KV18-450BZXC is a 144Mbit synchronous SRAM using DDR II+ architecture, organized as 4M x 36. It clocks at 450 MHz over a parallel interface, making it a fit for high-throughput buffer and lookup-table applications in networking, telecom, and test equipment where read-write turnaround dead cycles are unacceptable. Package is a 165-ball FBGA (15x17 mm) for surface-mount assembly.
450 MHz clock — timing closure and bus margin
The 450 MHz clock rate means a 2.22 ns cycle time. For a DDR II+ device, data is transferred on both edges, so the effective data rate is 900 MT/s per pin. That demands careful signal-integrity work on the PCB — controlled impedance, matched trace lengths, and adequate decoupling on the 1.7V-1.9V rail. The parallel 36-bit data bus also multiplies the routing challenge; expect to budget for a multi-layer board with a solid ground plane. The part's synchronous nature simplifies timing closure versus asynchronous SRAM, but the margin at 450 MHz leaves little room for sloppy layout.
The base product number CY7C1670 identifies the family; density and speed grade variants share the same footprint, which helps if a future spin needs more headroom.
Package and supply — what the board sees
The 165-FBGA (15x17 mm) package is a fine-pitch BGA requiring soldermask-defined pads and likely microvia escape routing for the inner balls. The 1.7V-1.9V supply is a single rail — no separate VDDQ — so the power design is simpler than some DDR SRAMs that need a separate I/O voltage.