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Infineon Technologies CY7C1620KV18-333BZXI — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1620KV18-333BZXI 144Mbit DDR II SRAM, 333 MHz

MPNCY7C1620KV18-333BZXI
Active

Infineon Technologies CY7C1620KV18-333BZXI, DDR II synchronous SRAM, 144 Mbit, 333 MHz, 4M x 36, 1.7-1.9V, -40 to 85°C, 165-FBGA (15x17), Tray.

$265.2828Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1620KV18-333BZXI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Voltage1.7V ~ 1.9V
Frequency333 MHz
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTray
TechnologySRAM - Synchronous, DDR II
Memory size144Mbit
Memory formatSRAM
Case165-LBGA
Memory organization4M x 36

Product details

144 Mbit DDR II SRAM at 333 MHz — what the clock rate buys you

The CY7C1620KV18-333BZXI is a 144 Mbit DDR II synchronous SRAM from Infineon, organized as 4M words by 36 bits. The 333 MHz clock drives a double-data-rate interface, meaning data transfers on both clock edges — the effective data rate per pin is 666 MT/s, and the 36-bit-wide bus delivers a peak bandwidth of roughly 24 Gbit/s. That bandwidth suits high-throughput applications like network packet buffers, test equipment capture memory, or large FPGA cache stores where the read-write cycle time matters more than the raw density. The 1.7 V to 1.9 V supply rail is the standard for DDR II SRAM cores — it keeps the I/O swing small enough to reduce dynamic power at 333 MHz, but tight enough that the board's power distribution must hold the rail within 100 mV of the target.

Package and board-fit — 165-ball FBGA

The 165-FBGA (15x17 mm) package is a fine-pitch BGA — the ball pitch is 1.0 mm, which means a 4-layer PCB with microvias is the practical minimum for fan-out. The Tray packaging means the parts arrive in anti-static trays, not tape-and-reel — factor this into the pick-and-place feeder setup if the line expects reeled components.

Frequently asked questions

What is the memory organization and supply voltage for CY7C1620KV18-333BZXI?

The memory is organized as 4M words by 36 bits (144 Mbit total). The supply voltage range is 1.7 V to 1.9 V, which is the standard DDR II SRAM core voltage.

Where can I buy CY7C1620KV18-333BZXI and how do I get a price?

This active part is sourced to order through independent distribution.