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Infineon Technologies CY7C1613KV18-300BZXC — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1613KV18-300BZXC Infineon QDR II SRAM, 144Mbit, 300 MHz

MPNCY7C1613KV18-300BZXC
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Infineon Technologies CY7C1613KV18-300BZXC QDR II synchronous SRAM, 144 Mbit (8M x 18), 300 MHz clock, 1.7V-1.9V supply, 165-ball FBGA, tray.

$253.1400Ref. price · indicative, final on quote
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1613KV18-300BZXC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Voltage1.7V ~ 1.9V
Frequency300 MHz
Memory interfaceParallel
Operating temperature0°C~70°C(TA)
PackageTray
TechnologySRAM - Synchronous, QDR II
Memory size144Mbit
Memory formatSRAM
Case165-LBGA
Memory organization8M x 18

Product details

144 Mbit QDR II SRAM at 300 MHz — bandwidth budget for the line

The CY7C1613KV18-300BZXC is a 144 Mbit synchronous SRAM using the QDR II architecture, organized as 8M x 18 bits. The 300 MHz clock rate delivers a peak read bandwidth of 5.4 Gbit/s per port on the parallel bus interface — the limiting factor in a high-throughput lookup table or packet buffer is the I/O timing closure at this frequency, not the core array access.

Operates from a 1.7 V to 1.9 V core supply — the 200 mV tolerance window demands a tightly regulated rail, typically from a dedicated LDO or a point-of-load converter with less than 1% set-point error. The 165-ball FBGA package (15 mm x 17 mm body) uses a 1.0 mm ball pitch. The four-layer PCB minimum for fan-out is a board-stack constraint — the inner signal layers must carry the QDR II address and data buses with matched-length routing to maintain the 300 MHz timing budget.

Frequently asked questions

What is the memory organization of CY7C1613KV18-300BZXC?

It is organized as 8M words by 18 bits, for a total of 144 Mbit. The 18-bit data bus width suits applications needing a parity or ECC bit per 16-bit word without doubling the bus.