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Infineon Technologies CY7C1568KV18-500BZC — Memory (DRAM / SRAM / Flash / EEPROM)

Cypress CY7C1568KV18-500BZC 72Mbit DDR II+ SRAM, 500 MHz

MPNCY7C1568KV18-500BZC
Obsolete

Infineon (Cypress) CY7C1568KV18-500BZC, 72Mbit synchronous SRAM, DDR II+ interface, 500 MHz clock, 4M x 18 organization, 165-FBGA (13x15), 1.7V–1.9V supply, commercial temp 0°C to 70°C.

Infineon Technologies CY7C1568KV18-500BZC datasheet (PDF)
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C1568KV18-500BZC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Voltage1.7V ~ 1.9V
Frequency500 MHz
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTray
TechnologySRAM - Synchronous, DDR II+
Memory size72Mbit
Memory formatSRAM
Case165-LBGA
Memory organization4M x 18

Product details

The CY7C1568KV18-500BZC: This is a high-bandwidth, low-latency memory designed for networking line cards, telecom switches, and test equipment where the data bus must sustain back-to-back read/write operations without dead cycles. The DDR II+ architecture eliminates bus-turnaround penalties, making it a fit for packet buffers and lookup tables that demand deterministic access at speed.

A 500 MHz clock on a parallel SRAM bus means the data valid window is roughly 1 ns. That forces tight PCB trace-length matching between the controller and the memory — expect to budget ±50 ps skew on the data and strobe lines. The 1.7V to 1.9V core supply also means the I/O is not 3.3 V tolerant; the memory controller must match the same voltage rail or use a level translator.

165-FBGA — footprint and rework considerations

The 165-ball FBGA measures 13x15 mm.

Frequently asked questions

What is the memory organization and clock frequency of CY7C1568KV18-500BZC?

It is organized as 4M x 18 bits (72 Mbit total) and operates at a 500 MHz clock frequency. The DDR II+ interface transfers data on both clock edges, giving an effective data rate of 1 Gbps per pin.