Skip to main content
Infineon Technologies CY7C1565KV18-400BZI — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1565KV18-400BZI 72Mbit QDR II+ SRAM, 400 MHz

MPNCY7C1565KV18-400BZI
Active

Infineon CY7C1565KV18-400BZI, 72Mbit Synchronous QDR II+ SRAM, 2M x 36 organization, 400 MHz clock, 1.7V–1.9V supply, -40°C to 85°C, 165-ball FBGA (13x15 mm), Tray.

$242.0800Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1565KV18-400BZI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency400 MHz
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTray
TechnologySRAM - Synchronous, QDR II+
Memory size72Mbit
Memory formatSRAM
Case165-LBGA
Memory organization2M x 36

Product details

72 Mbit QDR II+ SRAM at 400 MHz — bus bandwidth for packet buffers

Its 400 MHz clock rate delivers back-to-back read/write throughput without the dead cycles that older NoBL or DDR SRAMs impose — a direct fit for high-bandwidth network buffers, line cards, and FPGA-based packet-processing engines where every bus cycle counts.

Package and mounting — 165-FBGA (13x15 mm)

The fine-pitch BGA requires a multi-layer PCB with microvias or blind vias for signal breakout.

Frequently asked questions

What is the package and footprint for CY7C1565KV18-400BZI?

It comes in a 165-ball FBGA (13x15 mm) package, surface-mount, supplied in Tray.

What technology does CY7C1565KV18-400BZI use?

It is a synchronous QDR II+ SRAM, volatile memory, with a parallel interface and a 400 MHz clock.

What is the memory organization and density?

72 Mbit density organized as 2M x 36 (2 million words of 36 bits each).