Infineon CY7C1512KV18-333BZI, 72Mbit synchronous QDR II SRAM, 333 MHz clock frequency, 4M x 18 organization, 1.7V–1.9V supply, 165-FBGA (13x15 mm), -40°C to 85°C industrial temperature range.
| Parameter | Value |
|---|---|
| Memory type | Volatile |
| Mounting | Surface Mount |
| Supply voltage | 1.7V ~ 1.9V |
| Clock frequency | 333 MHz |
| Memory interface | Parallel |
| Operating temperature | -40°C~85°C(TA) |
| Package | Tray |
| Technology | SRAM - Synchronous, QDR II |
| Memory size | 72Mbit |
| Memory format | SRAM |
| Case | 165-LBGA |
| Memory organization | 4M x 18 |
The CY7C1512KV18-333BZI: 72 Mbit synchronous SRAM using QDR II architecture, organized as 4M x 18 bits. 333 MHz clock rate enables back-to-back read and write transactions on separate data ports.
333 MHz clock frequency. QDR II architecture splits the data bus into separate read and write ports, eliminating turnaround penalty.
The package is a 165-ball FBGA (13x15 mm), surface mount. The supplier device package code is 165-FBGA (13x15).
It is a synchronous QDR II SRAM — volatile memory with a parallel interface, organized 4M x 18 bits for a total of 72 Mbit.