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Infineon Technologies CY7C1512AV18-250BZXC — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1512AV18-250BZXC Cypress QDR II SRAM, 72Mbit, 250 MHz

MPNCY7C1512AV18-250BZXC
Obsolete

Cypress Semiconductor CY7C1512AV18-250BZXC, QDR II synchronous SRAM, 72Mbit (4M x 18), 250 MHz clock, 1.7–1.9 V supply, 165-LBGA (15x17 mm FBGA), 0–70 °C commercial temperature, Tray.

Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C1512AV18-250BZXC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Voltage1.7V ~ 1.9V
Frequency250 MHz
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTray
TechnologySRAM - Synchronous, QDR II
Memory size72Mbit
Memory formatSRAM
Case165-LBGA
Memory organization4M x 18

Product details

QDR II SRAM for high-throughput buffer applications

It operates at a 250 MHz clock rate, using a parallel interface with separate read and write ports to eliminate bus-turnaround dead cycles — a key advantage for network packet buffers, telecom line cards, and test equipment that need back-to-back read/write throughput without wait states.

At 250 MHz, each port delivers a peak data rate of 500 MHz equivalent (double-data-rate on the QDR bus). The 165-ball FBGA (15x17 mm) requires a four-layer minimum PCB with dedicated power and ground planes to keep signal integrity across the 18-bit data bus.

If the design can accommodate a drop-in alternative, a pin-compatible QDR II SRAM (same 165-LBGA footprint, same 1.7–1.9 V supply, same 250 MHz clock) may be available — verify the exact memory organization and timing parameters against the datasheet before substituting.

Not suitable for outdoor base stations, engine bays, or unheated enclosures without active thermal management.

Frequently asked questions

What is the replacement for CY7C1512AV18-250BZXC?

No official successor is recorded. A pin-compatible QDR II SRAM in the same 165-FBGA footprint with matching 1.7–1.9 V supply and 250 MHz clock may serve as a substitute, but the memory organization (4M x 18) and timing parameters must be verified against the original datasheet. Contact us with your BOM for cross-reference assistance.