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Infineon Technologies CY7C1474V33-200BGC — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1474V33-200BGC 72Mbit SRAM, 200 MHz, 3 ns

MPNCY7C1474V33-200BGC
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Infineon CY7C1474V33-200BGC, NoBL™ series, Synchronous SDR SRAM, 72Mbit (1M x 72), 200 MHz clock frequency, 3 ns access time, 3.135V~3.6V supply, 209-FBGA (14x22), 0°C~70°C.

$184.8000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1474V33-200BGC specifications
ParameterValue
SeriesNoBL™
Memory typeVolatile
MountingSurface Mount
Supply voltage3.135V ~ 3.6V
Clock frequency200 MHz
Memory interfaceParallel
Operating temperature0°C~70°C(TA)
PackageTray
TechnologySRAM - Synchronous, SDR
Access time3 ns
Memory size72Mbit
Memory formatSRAM
Case209-BGA
Memory organization1M x 72

Product details

72Mbit NoBL™ synchronous SRAM for high-throughput data paths

Clocked at 200 MHz with a 3 ns access time, it keeps the pipeline full for back-to-back transactions — useful in network buffers, telecom line cards, and high-end test equipment where every bus turnaround cycle costs throughput. The 3.3V supply (3.135V to 3.6V) aligns with standard 3.3V I/O logic, and the 209-ball FBGA (14x22 mm) footprint fits a dense PCB layout.

Package and rework considerations — 209-FBGA (14x22 mm)

The 209-ball FBGA measures 14x22 mm with a 1.0 mm ball pitch typical of this density class. Pin 1 is marked by a chamfered corner on the package; verify orientation against the board silkscreen before placing, because a 209-ball BGA is not coming off cleanly if you cook it on backwards.

Frequently asked questions

What is the voltage range for CY7C1474V33-200BGC?

The supply voltage range is 3.135V to 3.6V, operating from a nominal 3.3V rail.

Can CY7C1474V33-200BGC be used as a drop-in replacement for CY7C1474V33-250BGC?

No — the 200 MHz speed grade runs at a lower clock ceiling than the 250 MHz variant. The pinout and package are identical, but the timing specification differs; verify bus timing margin before substituting.

What is CY7C1474V33-200BGC's memory organization?

Organized as 1M x 72 — 72Mbit total density with a 72-bit wide data bus in a single synchronous SRAM device.