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Infineon Technologies CY7C1474BV25-200BGIT — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1474BV25-200BGIT Infineon SRAM, 72Mbit, 200 MHz

MPNCY7C1474BV25-200BGIT
Obsolete

Infineon Technologies NoBL™ synchronous SRAM, CY7C1474BV25-200BGIT, 72 Mbit (1M x 72), 200 MHz clock, 3 ns access, 2.375 V–2.625 V supply, -40°C to 85°C, 209-FBGA.

Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C1474BV25-200BGIT specifications
ParameterValue
SeriesNoBL™
Memory typeVolatile
MountingSurface Mount
Voltage2.375V ~ 2.625V
Frequency200 MHz
Memory interfaceParallel
Operating temperature-40°C~85°C(TA)
PackageTape & Reel (TR)
TechnologySRAM - Synchronous, SDR
Access time3 ns
Memory size72Mbit
Memory formatSRAM
Case209-BGA
Memory organization1M x 72

Product details

72 Mbit NoBL synchronous SRAM — 200 MHz, 3 ns access

The CY7C1474BV25-200BGIT: The NoBL (No Bus Latency) architecture eliminates dead cycles between reads and writes — the bus can switch direction on consecutive clock edges without an idle cycle, which matters for high-throughput data buffers in networking or test equipment. Supply voltage is 2.375 V to 2.625 V — a tight 2.5 V nominal rail that requires a clean regulator, not a shared 3.3 V bus.

209-FBGA package — layout considerations

Housed in a 209-ball FBGA (14x22 mm), the package demands a multi-layer PCB for fan-out. The 0.80 mm ball pitch is manageable with standard via-in-pad processes, but the tight supply tolerance (2.375 V–2.625 V) means the decoupling capacitor placement and PDN impedance need attention — a 100 nF per supply ball pair is typical for this density.

Frequently asked questions

How can I order CY7C1474BV25-200BGIT or check availability?

This part is sourced to order against an RFQ through independent channels. Submit a request for current pricing and lot availability — quantities are confirmed at quote time.