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Infineon Technologies CY7C1472BV33-200BZXC — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1472BV33-200BZXC Cypress NoBL SRAM, 72Mbit 200 MHz

MPNCY7C1472BV33-200BZXC
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Cypress NoBL CY7C1472BV33-200BZXC, 72Mbit synchronous SDR SRAM, 4M x 18 organization, 200 MHz clock, 3 ns access time, 3.3 V supply, 165-LBGA (15x17) in tray, 0°C to 70°C.

$123.2000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1472BV33-200BZXC specifications
ParameterValue
SeriesNoBL™
Memory typeVolatile
MountingSurface Mount
Supply voltage3.135V ~ 3.6V
Clock frequency200 MHz
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTray
TechnologySRAM - Synchronous, SDR
Access time3 ns
Memory size72Mbit
Memory formatSRAM
Case165-LBGA
Memory organization4M x 18

Product details

The Cypress CY7C1472BV33-200BZXC is a 72 Mbit synchronous SRAM organized 4M x 18, built on the NoBL (No Bus Latency) architecture. It runs at a 200 MHz clock with a 3 ns access time, meaning the pipeline can deliver back-to-back reads or writes without inserting dead cycles — a trait that matters when your bus is the bottleneck in a high-throughput buffer, cache, or FIFO application.

This limits the part to indoor, climate-controlled equipment.

Frequently asked questions

What is the memory organization of CY7C1472BV33-200BZXC?

It is organized as 4M words by 18 bits (4M x 18), giving a total of 72 Mbit. The 18-bit word width suits 16-bit data buses with two parity/ECC bits.