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Infineon Technologies CY7C1462KVE25-167BZI — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1462KVE25-167BZI NoBL SRAM, 36Mbit 167 MHz

MPNCY7C1462KVE25-167BZI
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Infineon CY7C1462KVE25-167BZI, NoBL™ series, Synchronous SRAM, 36Mbit (2M x 18), 167 MHz, 3.4 ns access, 2.5V supply, -40°C to 85°C, 165-ball FBGA (15x17 mm), Tray.

$73.0975Ref. price · indicative, final on quote
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MOQ1 pcs
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Specifications

CY7C1462KVE25-167BZI Technical Specifications
ParameterValue
SeriesNoBL™
Memory typeVolatile
Mounting typeSurface Mount
Voltage2.375V ~ 2.625V
Frequency167 MHz
Memory interfaceParallel
Operating temperature-40°C~85°C(TA)
PackageTray
TechnologySRAM - Synchronous, SDR
Access time3.4 ns
Memory size36Mbit
Memory formatSRAM
Case165-LBGA
Memory organization2M x 18

Product details

NoBL synchronous SRAM for high-throughput data paths

The Infineon CY7C1462KVE25-167BZI is a 36Mbit synchronous SRAM organized as 2M x 18, clocked at 167 MHz with a 3.4 ns access time. It uses the NoBL (No Bus Latency) architecture, which eliminates the dead cycle normally required when switching between read and write operations on a common I/O bus. That means back-to-back transactions at full clock rate — no turnaround penalty — which matters directly for packet buffer, cache, or FIFO replacement in networking gear, base stations, or real-time imaging pipelines where every bus cycle carries data. The part operates from a 2.5V supply (2.375V to 2.625V) and is rated over the industrial temperature range of -40°C to 85°C, so it fits outdoor telecom cabinets, factory-floor controllers, and engine-bay electronics where ambient heat or cold-soak is a given. The 165-ball FBGA package (15x17 mm) with parallel interface demands a controlled-impedance PCB and X-ray inspection on assembly — not a rework-friendly footprint, but the density and speed make that tradeoff standard for this class.

3.4 ns access time and 167 MHz clock — timing margin in the bus

The 3.4 ns access time at 167 MHz determines whether this part meets setup/hold on a fast FPGA or ASIC memory controller. The NoBL architecture eliminates the turnaround dead cycle, so the controller never stalls waiting for the bus to float.

Lifecycle and sourcing posture

The CY7C1462KVE25-167BZI carries an active product status from Infineon. It is a current-production synchronous SRAM in the NoBL family.

Frequently asked questions

What is the NoBL series on this component line?

NoBL stands for No Bus Latency, a Cypress (now Infineon) SRAM architecture that eliminates the dead cycle when switching between read and write on a common I/O bus, enabling back-to-back transactions at full clock rate.

What package does CY7C1462KVE25-167BZI come in?

It is supplied in a 165-ball FBGA (15x17 mm) package, shipped in Tray format. The fine-pitch BGA requires controlled-impedance PCB layout and X-ray inspection for assembly verification.