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Infineon Technologies CY7C1426KV18-300BZXC — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1426KV18-300BZXC Infineon QDR II SRAM, 36Mbit, 300 MHz

MPNCY7C1426KV18-300BZXC
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Infineon Technologies QDR II SRAM, 36Mbit (4M×9), 300 MHz parallel interface, 1.7–1.9V supply, 165-LBGA tray, 0°C–70°C.

Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C1426KV18-300BZXC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Voltage1.7V ~ 1.9V
Frequency300 MHz
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTray
TechnologySRAM - Synchronous, QDR II
Memory size36Mbit
Memory formatSRAM
Case165-LBGA
Memory organization4M x 9

Product details

36Mbit QDR II at 300 MHz — the throughput ceiling

The CY7C1426KV18-300BZXC is a 36Mbit QDR II synchronous SRAM organized as 4M x 9, clocked at 300 MHz via a parallel interface. This is a high-bandwidth part built for look-aside caches, packet buffers, and network processor memory where the bus must keep up with line-rate traffic. The 300 MHz clock means each read or write cycle completes in under 3.3 ns — the limiting factor in a high-throughput design is often the board trace delay, not the SRAM itself.

Supply rail and temperature — the operating envelope

The core supply is 1.7V to 1.9V, a tight window that demands a clean rail with ripple well below 50 mV peak-to-peak at the package pins. The 165-FBGA (13x15 mm) footprint places the decoupling caps close to the BGA balls — any inductance in the supply path eats into the timing margin at 300 MHz.

Frequently asked questions

What is the closest pin-compatible alternative to CY7C1426KV18-300BZXC?

No official pin-compatible successor is listed by Infineon. A parametric search for a QDR II SRAM in the same 165-FBGA (13x15 mm) package with a 1.7–1.9V supply and a 300 MHz clock is the practical approach for a replacement.