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Infineon Technologies CY7C1426AV18-300BZXC — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1426AV18-300BZXC 36Mbit QDR II SRAM, 300 MHz, 165-FBGA

MPNCY7C1426AV18-300BZXC
Obsolete

Infineon Technologies CY7C1426AV18-300BZXC, 36Mbit QDR II synchronous SRAM, 300 MHz clock, 1.7-1.9 V supply, 165-LBGA (15×17 mm), 4M×9 organization, 0-70 °C, parallel interface, Tray.

Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C1426AV18-300BZXC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Voltage1.7V ~ 1.9V
Frequency300 MHz
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTray
TechnologySRAM - Synchronous, QDR II
Memory size36Mbit
Memory formatSRAM
Case165-LBGA
Memory organization4M x 9

Product details

36Mbit QDR II SRAM — 300 MHz, 1.7–1.9 V, 165-FBGA

The CY7C1426AV18-300BZXC is a 36 Mbit Quad Data Rate (QDR) II synchronous SRAM organized as 4M × 9 bits, operating at a 300 MHz clock frequency with a parallel interface. The 1.7 V to 1.9 V supply range aligns with low-voltage memory buses common in networking and telecom line-card designs. Packaged in a 165-ball LBGA (15 × 17 mm), the device is surface-mount and supplied in tray format.

QDR II bus architecture and throughput

QDR II architecture delivers four data words per clock cycle — two on the rising edge and two on the falling edge of both the K and K# clocks — yielding a peak data rate of 1.2 Gbps per I/O pin at 300 MHz. This burst-oriented interface is designed for applications requiring high random-access throughput with separate read and write ports, eliminating bus-turnaround cycles. The 4M × 9 organization provides a 9-bit-wide data path (8 data bits plus one parity/ECC bit), commonly used in packet-buffer and lookup-table designs where the extra bit supports error detection without external logic.

Lifecycle status and sourcing

Infineon lists the CY7C1426AV18-300BZXC as Obsolete. No pin-compatible direct replacement from the original manufacturer is documented. For existing BOM lines, the 165-FBGA footprint and 1.7–1.9 V supply rail are the critical fit parameters.

Frequently asked questions

What is the memory organization and clock speed of CY7C1426AV18-300BZXC?

The device is a 36 Mbit QDR II synchronous SRAM organized as 4M × 9 bits, with a 300 MHz clock frequency and a parallel interface. The supply voltage range is 1.7 V to 1.9 V.