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Infineon Technologies CY7C1420BV18-250BZC — Memory (DRAM / SRAM / Flash / EEPROM)

Cypress CY7C1420BV18-250BZC SRAM, 36Mbit DDR II, 250 MHz

MPNCY7C1420BV18-250BZC
Obsolete

Cypress CY7C1420BV18-250BZC, DDR II synchronous SRAM, 36Mbit (1M x 36), 250 MHz clock, parallel interface, 1.7V–1.9V supply, 165-FBGA (15x17), 0°C to 70°C.

Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C1420BV18-250BZC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Voltage1.7V ~ 1.9V
Frequency250 MHz
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTray
TechnologySRAM - Synchronous, DDR II
Memory size36Mbit
Memory formatSRAM
Case165-LBGA
Memory organization1M x 36

Product details

The Cypress CY7C1420BV18-250BZC is a 36 Mbit synchronous DDR II SRAM organized as 1M x 36, clocked at 250 MHz over a parallel interface. It operates from a 1.7V to 1.9V supply and is housed in a 165-ball FBGA (15x17 mm) for surface-mount assembly. This is a volatile, high-speed memory part designed for applications that demand back-to-back read/write throughput without bus-turnaround dead cycles — think network packet buffers, telecom line cards, or high-end test equipment where the data pipeline cannot stall.

The 250 MHz clock rating sets the timing closure target for the controller interface. At this speed, trace-length matching and signal-integrity margins on the parallel bus become design-critical — the FBGA package helps keep inductance low, but the PCB layout still needs controlled impedance and matched-length routes to the memory controller. For a design already running a 250 MHz memory bus, this part drops in without a speed-grade penalty.

This part is officially obsolete per the manufacturer — Cypress has discontinued the CY7C1420BV18-250BZC. No last-time-buy window remains open through the original channel. There is no pin-compatible direct replacement listed by the manufacturer, so a drop-in swap will require validating an alternative SRAM against the existing board layout and timing budget.

The 1M x 36 organization provides a 36-bit word width.

Frequently asked questions

What is the memory organization of CY7C1420BV18-250BZC?

The memory is organized as 1M x 36 — 1,048,576 words of 36 bits each, for a total of 36 Mbit.

Can CY7C1420BV18-250BZC be used in a 1.8V DDR II SRAM application?

Yes, the supply range of 1.7V to 1.9V covers a nominal 1.8V rail, and the DDR II synchronous interface is designed for double-data-rate operation. Confirm the controller's I/O voltage and timing budget at 250 MHz before committing the BOM.