300 MHz DDR II SRAM for high-throughput data paths
The CY7C1418KV18-300BZXC is a 36Mbit synchronous DDR II SRAM organized as 2M x 18 bits, clocked at 300 MHz. It is the memory array for designs that need deterministic read-write latency on a wide parallel bus — typically a packet buffer, a look-up table, or a trace FIFO in networking, test, or industrial control equipment. DDR II means data is transferred on both clock edges, so the effective data rate at the I/O pins is 600 MT/s per pin. The 18-bit interface width gives a peak bandwidth of 10.8 Gbit/s into the FPGA or ASIC it feeds.
Core supply is 1.7 V to 1.9 V — the 200 mV tolerance around the nominal 1.8 V rail means the on-board regulator must hold regulation within that band under load transients.
165-ball FBGA — layout and fan-out
A 1.0 mm pitch is routable on a 4-layer board with 0.18 mm trace/space — the inner rows of balls need micro-vias or dog-bone fan-out to the inner layers. The supply balls are distributed around the periphery and the core; the decoupling capacitor placement should mirror the ball map to keep the loop inductance below 2 nH per supply pair.