Cypress CY7C1414BV18-200BZXI 36Mbit QDR II SRAM, 200 MHz, 1.8V
Cypress QDR II synchronous SRAM, 36Mbit / 1M x 36, 200 MHz parallel interface, 1.7–1.9 V supply, 165-LBGA (15x17), −40 to 85 °C, Tray.
- 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
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- MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications
| Parameter | Value |
|---|---|
| Memory type | Volatile |
| Mounting type | Surface Mount |
| Voltage | 1.7V ~ 1.9V |
| Frequency | 200 MHz |
| Memory interface | Parallel |
| Operating temperature | -40°C~85°C(TA) |
| Package | Tray |
| Technology | SRAM - Synchronous, QDR II |
| Memory size | 36Mbit |
| Memory format | SRAM |
| Case | 165-LBGA |
| Memory organization | 1M x 36 |
Frequently asked questions
What voltage and clock rate does this SRAM require, and can it be hot-swapped?
The part operates on a 1.7–1.9 V rail and clocks at 200 MHz. The QDR II state machine is sensitive to uncontrolled power cycles — a hot-swap without a controlled power-down sequence risks bus contention and data corruption on the next access cycle. A controlled power-down with the memory controller flushing pending writes before rail removal is the correct procedure; hot-swap is not supported by the datasheet framing.
What is the memory organization and I/O width?
The Cypress CY7C1414BV18-200BZXI is organized as 1M x 36, giving a 36-bit I/O width aligned with 32-bit system buses plus ECC framing. The QDR II architecture provides four independent access ports per clock cycle. A functionally equivalent ISSI part (IS61NLP51236) is density-competitive but requires pinout and addressing-mode verification against the Cypress memory controller before substitution.