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Infineon Technologies CY7C1412KV18-333BZXI — Memory (DRAM / SRAM / Flash / EEPROM)

Cypress CY7C1412KV18-333BZXI 36Mbit QDR-II SRAM, 333 MHz

MPNCY7C1412KV18-333BZXI
Last Buy

Cypress (Infineon) CY7C1412KV18-333BZXI synchronous QDR-II SRAM, 36Mbit organized 2M x 18, 333 MHz clock, 1.7-1.9V supply, industrial temp -40°C to 85°C, 165-FBGA (13x15) tray.

$46.6509Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C1412KV18-333BZXI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency333 MHz
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTray
TechnologySRAM - Synchronous, QDR II
Memory size36Mbit
Memory formatSRAM
Case165-LBGA
Memory organization2M x 18

Product details

QDR-II SRAM at 333 MHz — what it delivers for the bus

The CY7C1412KV18-333BZXI is a 36Mbit synchronous QDR-II SRAM organized 2M x 18, clocked at 333 MHz. QDR-II architecture separates read and write data ports, eliminating bus-turnaround dead cycles.

Industrial temperature — where it runs

Housed in a 165-ball FBGA measuring 13 x 15 mm. The fine-pitch BGA demands controlled-impedance routing and via-in-pad for the high-speed data lines; the 333 MHz clock edge is fast enough that signal-integrity simulation on the PCB is recommended before layout freeze.

Lifecycle — Last Buy window

Frequently asked questions

What is CY7C1412KV18-333BZXI's package?

It is supplied on tray in a 165-ball FBGA package measuring 13 x 15 mm.