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Infineon Technologies CY7C1412KV18-300BZXC — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1412KV18-300BZXC QDR-II SRAM, 36Mbit, 300 MHz

MPNCY7C1412KV18-300BZXC
End of Life

Infineon Technologies CY7C1412KV18-300BZXC, 36Mbit synchronous QDR-II SRAM, 300 MHz clock, 2M x 18 organization, 165-FBGA (13x15 mm), 1.7-1.9 V supply, 0°C to 70°C.

$42.9000Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1412KV18-300BZXC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency300 MHz
Memory interfaceParallel
Operating temperature0°C~70°C(TA)
PackageBulk
TechnologySRAM - Synchronous, QDR II
Memory size36Mbit
Memory formatSRAM
Case165-LBGA
Memory organization2M x 18

Product details

36 Mbit QDR-II SRAM at 300 MHz — throughput and bus architecture

The CY7C1412KV18-300BZXC is a 36 Mbit synchronous QDR-II SRAM organized as 2M x 18 bits, clocked at 300 MHz. QDR-II architecture provides separate read and write data ports, each operating on both clock edges, so the bus never stalls for turn-around cycles — the effective data rate is 600 MHz DDR per port. This makes it a fit for high-bandwidth buffer applications like packet processing in network line cards, where the read and write streams are independent and the memory must keep up with back-to-back transactions without arbitration gaps.

Package, supply, and temperature — board-fit constraints

Housed in a 165-ball FBGA measuring 13 x 15 mm, the part requires a multi-layer PCB for fan-out of the fine-pitch balls. The core supply rail must be regulated to 1.7 V–1.9 V; a nominal 1.8 V rail with ±3% tolerance keeps the die within spec across load transients. The commercial temperature range (0°C to 70°C) limits deployment to indoor, controlled-environment equipment — telecom central offices, data-centre switches, and test instrumentation. For extended-temperature designs, a different temperature grade would be required.

Frequently asked questions

What is the memory organization and clock speed of CY7C1412KV18-300BZXC?

The CY7C1412KV18-300BZXC is a 36 Mbit synchronous QDR-II SRAM organized as 2M x 18 bits with a 300 MHz clock. The QDR-II architecture provides separate read and write ports, each operating on both clock edges for an effective 600 MHz DDR data rate per port.