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Infineon Technologies CY7C1393BV18-250BZI — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1393BV18-250BZI Infineon 18Mbit DDR II SRAM, 250 MHz

MPNCY7C1393BV18-250BZI
Obsolete

Infineon Technologies TrueSpeed DDR II SRAM, 18Mbit (1M x 18), 250 MHz clock, 1.7–1.9 V supply, 165-FBGA (13x15) package, -40 to 85 °C, Tray.

Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C1393BV18-250BZI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Voltage1.7V ~ 1.9V
Frequency250 MHz
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTray
TechnologySRAM - Synchronous, DDR II
Memory size18Mbit
Memory formatSRAM
Case165-LBGA
Memory organization1M x 18

Product details

The CY7C1393BV18-250BZI is a 18 Mbit synchronous DDR II SRAM organized as 1M x 18, clocked at 250 MHz. The DDR II interface means data transfers on both clock edges, giving an effective bandwidth of 500 MT/s on a 18-bit bus — this is the throughput a network switch buffer or a test-equipment waveform memory needs when the bus is the bottleneck, not the core logic. Supply range is 1.7 V to 1.9 V, so it runs on a standard 1.8 V rail with margin for ripple. The -40 to 85 °C industrial temperature grade covers outdoor base-station and factory-floor enclosures without active cooling.

The package is RoHS-compliant and shipped in tray format, so the pick-and-place feeder setup is standard for this ball count.

Lifecycle reality — obsolete, sourced to order

Infineon lists this part as Obsolete. For a BOM line that already carries this order code, the supply path is surplus and broker channels; expect no factory lead time.

Frequently asked questions

How can I order CY7C1393BV18-250BZI or check availability?

This part is obsolete and sourced through independent distribution. Submit an RFQ — availability, pricing, and lot traceability are confirmed at quote time. No stock-holding claim is made here.