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Infineon Technologies CY7C1373KV33-133AXI — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1373KV33-133AXI NoBL SRAM, 18Mbit, 133 MHz

MPNCY7C1373KV33-133AXI
Active

Infineon Technologies NoBL™ synchronous SRAM, 18 Mbit (1M x 18), 133 MHz clock frequency, 6.5 ns access time, 3.135-3.6 V supply, -40 to 85 °C industrial, 100-TQFP (14x20 mm), tray.

$32.6500Ref. price · indicative, final on quote
Packaging100-LQFP
RoHSROHS3 Compliant
SeriesNoBL™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1373KV33-133AXI specifications
ParameterValue
SeriesNoBL™
Memory typeVolatile
MountingSurface Mount
Voltage3.135V ~ 3.6V
Frequency133 MHz
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTray
TechnologySRAM - Synchronous, SDR
Access time6.5 ns
Memory size18Mbit
Memory formatSRAM
Case100-LQFP
Memory organization1M x 18

Product details

133 MHz NoBL synchronous SRAM — 18 Mbit, 1M x 18

The CY7C1373KV33-133AXI: The 6.5 ns access time means the first word appears on the data bus within one clock cycle of the address being latched — no wait states for the initial read. The 1M x 18 organization suits 18-bit DSP data paths, packet-processing buffers, and wide-word cache applications where a 16-bit or 18-bit word is the natural data unit. The parallel interface eliminates serialization overhead that SPI or QSPI memories introduce at the controller boundary.

Supply voltage and temperature grade

The 100-TQFP (14x20 mm) package uses a 0.5 mm pitch — routable on a standard 4-layer PCB without microvias or blind vias.

Active lifecycle and compliance

ROHS3 compliant (no exemptions), which covers EU RoHS and similar global restrictions without a waiver.

Frequently asked questions

What is the memory organization and clock speed of CY7C1373KV33-133AXI?

It is organized as 1M x 18 (18 Mbit total) and clocked at 133 MHz. The 6.5 ns access time means the first word is available within one clock cycle of the address being latched.