Skip to main content
Infineon Technologies CY7C1361C-100BZXE — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1361C-100BZXE 9Mbit SRAM, 100 MHz, 165-FBGA

MPNCY7C1361C-100BZXE
Active

Infineon Technologies CY7C1361C-100BZXE synchronous SRAM, 9Mbit (256K x 36), 100 MHz clock, 8.5 ns access time, 3.135V-3.6V supply, -40°C to +125°C, 165-FBGA (13x15 mm), Tray.

$12.7300Ref. price · indicative, final on quote
Packaging165-LBGA
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1361C-100BZXE specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Voltage3.135V ~ 3.6V
Frequency100 MHz
Memory interfaceParallel
Operating temperature-40°C ~ 125°C (TA)
PackageTray
TechnologySRAM - Synchronous, SDR
Access time8.5 ns
Memory size9Mbit
Memory formatSRAM
Case165-LBGA
Memory organization256K x 36

Product details

What the 100 MHz clock and 256K x 36 organization mean for your datapath

The CY7C1361C-100BZXE is a 9 Mbit synchronous SRAM organized 256K words by 36 bits wide, clocked at 100 MHz — the 36-bit word width matches the datapath of many network processors and DSPs without needing to mux two 18-bit devices, saving board space and reducing the load on the bus. The 8.5 ns access time at 100 MHz means the data appears on the bus within one clock cycle after the address is latched — zero-wait-state reads are achievable with most 100 MHz bus masters, keeping the pipeline full in a high-throughput buffer application.

Temperature grade and package — where this part survives

Rated for -40°C to +125°C (TA) ambient — this is the full industrial temperature band, so the part handles outdoor telecom cabinets in summer and engine-bay electronics where the soak temperature hits the upper end. Housed in a 165-FBGA (13x15 mm) package — the 1.0 mm ball pitch is fine-pitch but routable on a 4-layer PCB with micro-vias; the 13x15 mm footprint is compact enough for a mezzanine card or line-card blade where real estate is tight. Single 3.135V to 3.6V supply rail — a standard 3.3V rail with ±5% tolerance covers the entire range, so no secondary regulator or LDO is needed for the SRAM core.

Lifecycle and sourcing posture

ROHS3 compliant — no exemptions for lead in solder or other restricted substances, so it passes the material declaration requirements for new EU and UKCA shipments without a waiver.

Frequently asked questions

Will CY7C1361C-100BZXE drop into a board designed for CY7C1041GE30-10ZSXI without rewiring?

No — the CY7C1041GE30-10ZSXI is a 4 Mbit SRAM in a 44-pin TSOP-II package with a 16-bit data bus, while the CY7C1361C-100BZXE is a 9 Mbit device in a 165-ball FBGA with a 36-bit bus. The footprint, pinout, and memory organization are completely different — a board spin is required.

What compliance documentation does Infineon provide for CY7C1361C-100BZXE?

The part is ROHS3 compliant per the manufacturer's declaration. Standard compliance documentation (RoHS, REACH, conflict minerals) is available from Infineon upon request through the supply chain.