Skip to main content
Infineon Technologies CY7C1361B-100AC — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1361B-100AC Infineon 9Mbit SRAM, 100 MHz, 100-LQFP

MPNCY7C1361B-100AC
Obsolete

Infineon Technologies CY7C1361B-100AC synchronous SRAM, 9 Mbit, 256K x 36, 100 MHz clock, 8.5 ns access, 3.135V–3.6V, 100-LQFP, commercial temp.

Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C1361B-100AC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Voltage3.135V ~ 3.6V
Frequency100 MHz
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageBag
TechnologySRAM - Synchronous, SDR
Access time8.5 ns
Memory size9Mbit
Memory formatSRAM
Case100-LQFP
Memory organization256K x 36

Product details

9 Mbit synchronous SRAM — 100 MHz, 256K x 36

The CY7C1361B-100AC is a 9 Mbit synchronous SRAM organized as 256K x 36 bits, clocked at 100 MHz with a 8.5 ns access time. It uses a parallel memory interface and operates from a 3.135V to 3.6V supply. This is a volatile SRAM in the synchronous SDR (single data rate) family, typically used as a cache or data buffer in networking, telecom, and embedded systems where deterministic access latency matters more than density.

Housed in a 100-LQFP package with a 14x20 mm body (supplier device package 100-TQFP), the part is surface-mount and requires a reflow profile compatible with JEDEC moisture sensitivity level 3. The fine-pitch QFP footprint demands careful solder paste stencil design to avoid bridging.

Sourcing reality — obsolete, quoted to order

Infineon lists the CY7C1361B-100AC as Obsolete. No stock-holding claim is made — each order is sourced per request.

Frequently asked questions

What is the memory organization and clock speed of CY7C1361B-100AC?

Organized as 256K x 36 bits with a 100 MHz clock and 8.5 ns access time, using a parallel interface.