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Infineon Technologies CY7C136-55NXCT — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C136-55NXCT 16Kbit SRAM, 55 ns, 52-PQFP

MPNCY7C136-55NXCT
Obsolete

Infineon Technologies CY7C136-55NXCT SRAM - Dual Port, Asynchronous, 16Kbit (2K x 8), 55 ns access, 4.5V-5.5V, 52-BQFP, Tape & Reel.

Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C136-55NXCT specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Voltage4.5V ~ 5.5V
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTape & Reel (TR)
TechnologySRAM - Dual Port, Asynchronous
Access time55 ns
Memory size16Kbit
Memory formatSRAM
Case52-BQFP
Memory organization2K x 8
Write cycle time - word, page55ns

Product details

55 ns dual-port SRAM — speed grade and arbitration

The CY7C136-55NXCT: In a dual-port architecture, both ports can access any memory location simultaneously; the 55 ns access time means the address-to-data-valid delay on a read is 55 ns max, and the write cycle time (word, page) is also 55 ns. This speed grade suits bus arbitration and shared-memory designs where the system clock period is above 55 ns. The commercial temperature range (0°C to 70°C) limits it to controlled indoor environments; no industrial or automotive temperature grade is offered.

52-PQFP footprint and board integration

Housed in a 52-BQFP (plastic quad flat pack) with a 10x10 mm body — the supplier device package is 52-PQFP. The 0.65 mm pitch gull-wing leads require a surface-mount reflow profile; the package is not moisture-sensitive per typical BQFP ratings, but the reel should be baked per J-STD-033 if the seal is broken and the floor life is exceeded.

Infineon lists the CY7C136-55NXCT as Obsolete. No official successor or pin-compatible replacement is recorded from the original manufacturer.

Frequently asked questions

What is the memory organization of CY7C136-55NXCT?

It is organized as 2K x 8 (16Kbit total), with a parallel interface and 55 ns access time. The write cycle time (word, page) is also 55 ns.