250 MHz synchronous SRAM for high-throughput data buffers
The CY7C1356C-250AXC is a 9Mbit synchronous SRAM from Infineon's NoBL™ family, organized 512K x 18 and clocked at 250 MHz. The 250 MHz clock rate sets the maximum bus throughput — at this speed the memory can sustain a new read or write on every clock edge in burst mode, making it suitable for high-bandwidth data buffers in networking or test equipment where the processor or FPGA needs deterministic access latency. The 2.8 ns access time is the delay from the clock edge to valid data on the output pins. In a system with a 250 MHz clock (4 ns period), the 2.8 ns access leaves 1.2 ns of setup margin for the receiving device — tight, but workable with controlled-impedance traces and matched propagation delays on the data bus.
Package, supply, and temperature grade — what fits the board
The part comes in a 100-lead LQFP with the supplier device package specified as 100-TQFP (14x20). The 0.5 mm pitch LQFP footprint is standard for this density — the 14x20 mm body fits a four-layer PCB with the address and data bus routed on inner layers. The supply voltage range is 3.135 V to 3.6 V, which is a standard 3.3 V rail with ±5 % tolerance; the core and I/O share this single supply, so no separate Vddq rail is needed.
Active lifecycle and compliance documentation
For compliance documentation, Infineon provides the standard ROHS3 declaration of conformity.