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Infineon Technologies CY7C1354CV25-166BZC — Memory (DRAM / SRAM / Flash / EEPROM)

Cypress CY7C1354CV25-166BZC NoBL SRAM, 9Mbit 166 MHz

MPNCY7C1354CV25-166BZC
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Cypress CY7C1354CV25-166BZC, NoBL series, 9Mbit Synchronous SRAM, 256K x 36 organization, 166 MHz clock, 3.5 ns access, 2.375V–2.625V supply, 165-FBGA (13x15 mm), 0°C to 70°C.

$11.7713Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1354CV25-166BZC specifications
ParameterValue
SeriesNoBL™
Memory typeVolatile
MountingSurface Mount
Supply voltage2.375V ~ 2.625V
Clock frequency166 MHz
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTray
TechnologySRAM - Synchronous, SDR
Access time3.5 ns
Memory size9Mbit
Memory formatSRAM
Case165-LBGA
Memory organization256K x 36

Product details

NoBL synchronous SRAM for high-throughput buffers

It clocks at 166 MHz with a 3.5 ns access time, eliminating the dead cycle between read and write operations that standard pipelined SRAMs require. The 36-bit word width suits designs needing parity or ECC alongside data — common in network switch buffers, telecom line cards, and DSP memory arrays. Supply range is 2.375 V to 2.625 V, and the part is specified for 0°C to 70°C commercial environments only.

The 166 MHz clock rate and 3.5 ns access time define the timing budget for the memory bus. NoBL architecture allows back-to-back read and write transactions without a turnaround cycle.

Frequently asked questions

What is the closest pin-compatible alternative to CY7C1354CV25-166BZC?

No official pin-compatible successor is listed for this exact density and speed grade. A board-level re-spin may be required for a replacement.

What is the NoBL series on this SRAM?

NoBL (No Bus Latency) is Cypress's architecture that eliminates the dead cycle between read and write operations, enabling back-to-back transactions without bus turnaround.