Infineon Technologies
Infineon CY7C13451G-100BZXE, synchronous SDR SRAM, 4Mbit (128K x 36), 100 MHz clock, 8 ns access, 3.135V–3.6V, -40°C to 125°C, 165-FBGA (13x15).
MOQ 1 · Tray · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Memory type | Volatile |
| Mounting | Surface Mount |
| Supply voltage | 3.135V ~ 3.6V |
| Clock frequency | 100 MHz |
| Memory interface | Parallel |
| Operating temperature | -40°C ~ 125°C (TA) |
| Package | Tray |
| Technology | SRAM - Synchronous, SDR |
| Access time | 8 ns |
| Memory size | 4Mbit |
| Memory format | SRAM |
| Case | 165-LBGA |
| Memory organization | 128K x 36 |
The Infineon CY7C13451G-100BZXE is a 4Mbit synchronous SRAM organized as 128K words by 36 bits. It runs on a 100 MHz clock with an 8 ns access time.
The 165-ball FBGA (13x15 mm) is a surface-mount package.
