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Infineon Technologies CY7C1319KV18-250BZC — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1319KV18-250BZC SRAM, 18Mbit, 250 MHz, FBGA-165

MPNCY7C1319KV18-250BZC
Obsolete

Infineon Technologies CY7C1319KV18-250BZC DDR II+ synchronous SRAM, 18Mbit (1M x 18), 250 MHz clock, 1.7V-1.9V supply, 165-ball FBGA (13x15 mm), tray.

Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C1319KV18-250BZC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Voltage1.7V ~ 1.9V
Frequency250 MHz
Memory interfaceParallel
Operating temperature0°C~70°C(TA)
PackageTray
TechnologySRAM - Synchronous, DDR II
Memory size18Mbit
Memory formatSRAM
Case165-LBGA
Memory organization1M x 18

Product details

Infineon lists the CY7C1319KV18-250BZC as Obsolete. Buyers should verify the date-code provenance and plan for a board-spin replacement if long-term supply is required.

18 Mbit DDR II+ synchronous SRAM at 250 MHz

It uses DDR II+ (Double Data Rate II+) technology, which clocks data on both rising and falling edges of the 250 MHz input clock, delivering a peak data rate of 500 MHz effective. This makes it suited for high-bandwidth pipelined applications such as network packet buffers, telecom line cards, and high-end test equipment where deterministic random access latency is critical. The parallel memory interface (18-bit data bus) means the part connects directly to a wide memory controller bus — not a serial SPI or QSPI SRAM.

Package, temperature grade, and board-fit

The 0.80 mm ball pitch demands a multi-layer PCB with microvias or blind vias for fan-out; a two-layer board will not route all 165 balls. Supplied in tray packaging.