DDR II+ SRAM — 18 Mbit, 200 MHz, 1.7 V–1.9 V core
The CY7C1318BV18-200BZI is a 18 Mbit synchronous DDR II+ SRAM from Infineon (formerly Cypress Semiconductor), organized as 1 M x 18. This is a volatile SRAM in the DDR II family, designed for high-bandwidth buffering and cache applications in networking, telecom, and industrial systems where read/write throughput is critical.
200 MHz clock — bus timing and throughput
The 200 MHz clock frequency defines the maximum data rate on the DDR II bus. Because it is a double-data-rate architecture, data is transferred on both rising and falling edges, effectively doubling the throughput per clock cycle relative to a single-data-rate SRAM at the same frequency. This matters for designs that need sustained read/write bandwidth — for example, a packet buffer in a line card or a cache in a baseband processor — where the memory bus is the bottleneck.
Package and assembly — 165-ball FBGA
The 165-ball LBGA (13x15 mm FBGA) is a fine-pitch BGA. Reflow profile must follow the manufacturer's recommendations for the solder-ball alloy. BGA rework requires X-ray inspection for voiding and alignment; the 13x15 mm footprint is manageable with a standard rework station.