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Infineon Technologies CY7C1315KV18-333BZC — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1315KV18-333BZC QDR II SRAM, 18 Mbit, 333 MHz, 165-FBGA

MPNCY7C1315KV18-333BZC
Last Buy

Infineon CY7C1315KV18-333BZC, QDR II synchronous SRAM, 18 Mbit (512K x 36), 333 MHz clock, parallel interface, 1.7V–1.9V supply, 165-FBGA (13x15 mm), commercial temperature 0°C to 70°C.

$30.4829Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C1315KV18-333BZC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage1.7V ~ 1.9V
Clock frequency333 MHz
Memory interfaceParallel
Operating temperature0°C ~ 70°C (TA)
PackageTray
TechnologySRAM - Synchronous, QDR II
Memory size18Mbit
Memory formatSRAM
Case165-LBGA
Memory organization512K x 36

Product details

It clocks at 333 MHz over a parallel interface, delivering back-to-back read and write on separate ports — no bus-turnaround dead cycles. That makes it a fit for high-throughput buffers in network switches, baseband processors, and test equipment where the data path needs full-rate reads and writes simultaneously.

At 333 MHz the QDR II interface runs a double-data-rate clock on both read and write ports. The 1.7 V to 1.9 V core supply keeps I/O swing tight, which helps signal integrity on a dense 165-ball FBGA layout.

Last Buy — sourcing reality

Package and assembly constraints

That rules out hand-soldering or field swap without a reflow oven and X-ray inspection.

Frequently asked questions

What package does CY7C1315KV18-333BZC come in?

It ships in a 165-ball LBGA (13x15 mm body), supplied in trays.

What technology is CY7C1315KV18-333BZC?

It is a synchronous QDR II SRAM — a volatile memory with separate read and write ports for simultaneous back-to-back access at 333 MHz.