QDR II SRAM for high-throughput line cards
The CY7C1315KV18-250BZC is a 18 Mbit Quad Data Rate (QDR) II synchronous SRAM from Infineon Technologies, organized as 512K words by 36 bits. The QDR II architecture delivers two read and two write data words per clock cycle at the 250 MHz clock rate, effectively quadrupling the data throughput compared to a conventional single-data-rate SRAM running at the same frequency. This makes it a fit for high-bandwidth, low-latency applications such as network switch buffers, telecom line-card look-up tables, and traffic-manager memory where the bus must keep up with line-rate packet processing.
Supply rail and temperature grade
The core supply range is 1.7 V to 1.9 V, so a dedicated 1.8 V rail is the typical choice — the part does not share a 3.3 V plane. The operating temperature range is 0°C to 70°C, which limits deployment to indoor, temperature-controlled equipment; it is not rated for industrial or automotive ambient extremes. The 165-ball FBGA package (13x15 mm body) requires a multi-layer PCB with controlled-impedance traces for the high-speed parallel bus. Tray packaging means the parts are delivered in anti-static trays, not tape-and-reel — confirm your pick-and-place feeder setup accepts trays before committing to a volume order.
Lifecycle and compliance note
However, the part is RoHS non-compliant, meaning the solder balls are tin-lead (eutectic or high-lead) rather than lead-free. This is a legacy RoHS exemption part; your assembly house must accept tin-lead BGA processing, and the finished product may need a RoHS exemption claim if sold into regulated markets. No official successor or second-source cross-reference is listed on the record.
Sourcing and availability
The CY7C1315KV18-250BZC is sourced through authorized and independent distribution channels. No stock-holding claim is made on this page; the part is quoted to order per RFQ.