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Infineon Technologies CY7C1270V18-400BZC — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1270V18-400BZC 36Mbit DDR II SRAM, 400 MHz

MPNCY7C1270V18-400BZC
Obsolete

Infineon Technologies CY7C1270V18-400BZC, DDR II synchronous SRAM, 36 Mbit, 400 MHz clock, 1M x 36 organization, parallel interface, 165-LBGA (15x17 mm), commercial temp 0–70 °C, tray.

Infineon Technologies CY7C1270V18-400BZC datasheet (PDF)
Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C1270V18-400BZC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Voltage1.7V ~ 1.9V
Frequency400 MHz
Memory interfaceParallel
Operating temperature0°C~70°C(TA)
PackageTray
TechnologySRAM - Synchronous, DDR II
Memory size36Mbit
Memory formatSRAM
Case165-LBGA
Memory organization1M x 36

Product details

Obsolete — what that means for your BOM

Infineon lists the CY7C1270V18-400BZC as Obsolete. For existing designs, the part is sourced through independent distribution — confirmed per RFQ, with availability and pricing quoted at order time.

36 Mbit DDR II SRAM at 400 MHz

The parallel bus delivers double-data-rate throughput — the memory transfers data on both edges of the clock, so the effective data rate is 800 MT/s per pin. That bandwidth suits high-speed cache, network buffers, and telecom line-card applications where latency must stay deterministic.

Package and supply rails

Housed in a 165-ball LBGA (15x17 mm) — the 1.0 mm ball pitch demands a multi-layer PCB for fan-out, and the core supply runs on 1.7 V to 1.9 V. The commercial temperature range (0 °C to 70 °C) limits it to indoor, controlled environments; no industrial or automotive grade here.