Memory selection memo: 36 Mbit DDR II SRAM at 375 MHz
The Infineon CY7C1270V18-375BZI is a 36 Mbit synchronous DDR II SRAM organized as 1M x 36, clocked at 375 MHz. This is a high-bandwidth, low-voltage memory intended for networking, telecom, and high-performance compute applications where fast, back-to-back read/write throughput is critical.
375 MHz clock — what it buys the system architect
The 375 MHz clock rate on a DDR II interface means data is transferred on both clock edges, effectively doubling the data rate per pin. For a 36-bit-wide bus, this yields a peak bandwidth of 27 Gbit/s (3.375 GB/s). That kind of throughput suits high-port-count switches, packet buffers, and real-time processing pipelines where the memory bus is the bottleneck.
165-ball FBGA — rework and layout notes
The 165-FBGA (15x17 mm) is a fine-pitch BGA. This is not a hand-rework-friendly package without a rework station and stencil. The board needs via-in-pad or microvia escape routing for the inner balls. Thermal management is via the BGA's central ground plane — no exposed pad, so the PCB copper plane and via array under the package do the heat spreading.
Lifecycle: obsolete — sourcing reality
The CY7C1270V18-375BZI is marked obsolete by Infineon. If a design is still in development, a migration to a current-generation synchronous SRAM or RLDRAM family should be evaluated.