Skip to main content
Infineon Technologies CY7C1168KV18-400BZXC — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1168KV18-400BZXC SRAM, 18Mbit DDR II+, 400 MHz, 165-FBGA

MPNCY7C1168KV18-400BZXC
Active

Infineon CY7C1168KV18-400BZXC, 18Mbit Synchronous SRAM DDR II+, 400 MHz, 1.8V, 1M x 18, Parallel, 165-FBGA (13x15), 0°C to 70°C, Tray.

$14.1400Ref. price · indicative, final on quote
Packaging165-LBGA
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1168KV18-400BZXC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Voltage1.7V ~ 1.9V
Frequency400 MHz
Memory interfaceParallel
Operating temperature0°C~70°C(TA)
PackageTray
TechnologySRAM - Synchronous, DDR II+
Memory size18Mbit
Memory formatSRAM
Case165-LBGA
Memory organization1M x 18

Product details

The Infineon CY7C1168KV18-400BZXC is a 18 Mbit synchronous SRAM using DDR II+ (Double Data Rate II+) architecture, organized as 1M x 18. It operates from a 1.7 V to 1.9 V supply and is rated for a 400 MHz clock frequency.

Frequently asked questions

Where can I buy CY7C1168KV18-400BZXC and how do I get a price?

This part is sourced through independent distribution. Submit an RFQ for current availability and pricing — quotes are confirmed at order time and reflect real-time market conditions.

What is the difference between CY7C1168KV18-400BZXC and CY7C1168KV18-300BZXC?

The 400BZXC runs at 400 MHz clock, while the 300BZXC runs at 300 MHz. Both are 18 Mbit, 1M x 18, 1.8 V, 165-FBGA parts. The 400 MHz version provides higher bandwidth for throughput-critical designs.

Is CY7C1168KV18-400BZXC compatible with 1.8V systems?

Yes. The supply voltage range is 1.7 V to 1.9 V, which directly matches 1.8 V logic families. No level translation is needed if the controller also operates at 1.8 V.