CY7C109D-10ZXI

Infineon Technologies

Infineon CY7C109D-10ZXI asynchronous SRAM, 1Mbit (128K x 8), 10 ns access time, parallel interface, 4.5V–5.5V supply, -40°C to 85°C industrial temp, 32-TSOP I package, Tray.

Infineon Technologies CY7C109D-10ZXI
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Technical specifications

CY7C109D-10ZXI specifications
Parameter / AttributeSpecification / Value
Memory typeVolatile
MountingSurface Mount
Supply voltage4.5V ~ 5.5V
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTray
TechnologySRAM - Asynchronous
Access time10 ns
Memory size1Mbit
Memory formatSRAM
Case32-TFSOP (0.724\", 18.40mm Width)
Memory organization128K x 8
Write cycle time - word, page10ns

Technical details

10 ns access time — bus timing margin for a 5V async memory

The 10 ns write cycle time matches the read access, so back-to-back operations run at full speed — no dead cycles for bus turnaround.

The industrial grade means the timing parameters are guaranteed across the full temperature range, not just at 25°C — important when the access time budget tightens at temperature extremes.

Package and footprint — 32-TSOP I

Housed in a 32-TSOP I (0.724" body width, 18.40 mm), this is a standard thin small-outline package with a JEDEC footprint that matches other 32-pin TSOP I SRAMs from the same era. The surface-mount package is reflow-compatible; MSL rating is typical for this class — verify the floor-life window before opening the moisture barrier bag.

The base product number CY7C109 covers multiple speed and temperature variants; the -10ZXI suffix selects the 10 ns industrial-grade version in TSOP I.

CY7C109D-10ZXI
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