Infineon Technologies
Infineon CY7C1069G30-10ZSXI, asynchronous SRAM, 16Mbit (2M x 8), 10 ns access time, parallel interface, 2.2V–3.6V supply, -40°C to 85°C, 54-TSOP II (0.400", 10.16mm width), tray.
MOQ 1 · Tray · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Memory type | Volatile |
| Mounting | Surface Mount |
| Supply voltage | 2.2V ~ 3.6V |
| Memory interface | Parallel |
| Operating temperature | -40°C ~ 85°C (TA) |
| Package | Tray |
| Technology | SRAM - Asynchronous |
| Access time | 10 ns |
| Memory size | 16Mbit |
| Memory format | SRAM |
| Case | 54-TSOP (0.400\", 10.16mm Width) |
| Memory organization | 2M x 8 |
| Write cycle time - word, page | 10ns |
The 10 ns access time and 10 ns write cycle time allow back-to-back bus operations without wait states.
For a BOM freeze or a second-source gate, the closest functional peer is the CY7C1061G30-10BVXI, which shares the same 16 Mbit density, 10 ns access time, and supply range but is organized as 1M x 16 and packaged in a 48-ball FBGA. The 2M x 8 organization here is the better fit for an 8-bit data bus.
