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Infineon Technologies CY7C1061G30-10ZSXI — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1061G30-10ZSXI Infineon 16Mbit Async SRAM, 10 ns

MPNCY7C1061G30-10ZSXI
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Infineon Technologies CY7C1061G30-10ZSXI asynchronous SRAM, 16Mbit (1M x 16), 10 ns access time, parallel interface, 2.2-3.6V supply, -40 to +85°C, 54-TSOP II, tray.

$50.5800Ref. price · indicative, final on quote
Packaging54-TSOP (0.400", 10.16mm Width)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1061G30-10ZSXI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Voltage2.2V ~ 3.6V
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTray
TechnologySRAM - Asynchronous
Access time10 ns
Memory size16Mbit
Memory formatSRAM
Case54-TSOP (0.400\", 10.16mm Width)
Memory organization1M x 16
Write cycle time - word, page10ns

Product details

54-TSOP II footprint and supply flexibility

The CY7C1061G30-10ZSXI: Packaged in a 54-TSOP II (0.400" body width, 10.16 mm), surface-mount package supplied in trays. The parallel interface and 3.6 V max supply allow direct connection to legacy 3.3 V bus architectures without a level translator.