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CY7C1061DV33-10BV1XI

CY7C1061DV33-10BV1XI Infineon SRAM, 16Mbit, 10 ns, 48-VFBGA

MPNCY7C1061DV33-10BV1XI
Obsolete

Infineon Technologies MoBL asynchronous SRAM, CY7C1061DV33-10BV1XI, 16Mbit (1M x 16), 10 ns access, 3 V – 3.6 V, -40°C to +85°C, 48-VFBGA tray.

Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C1061DV33-10BV1XI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Voltage3V ~ 3.6V
Memory interfaceParallel
Operating temperature-40°C~85°C(TA)
PackageTray
TechnologySRAM - Asynchronous
Access time10 ns
Memory size16Mbit
Memory formatSRAM
Case48-VFBGA
Memory organization1M x 16
Write cycle time - word, page10ns

Product details

Memory density and bus organization

The CY7C1061DV33-10BV1XI: Organised as 1M x 16 bits (16 Mbit total), this asynchronous SRAM presents a 16-bit-wide parallel data bus — a natural fit for 16-bit microcontrollers or DSPs that need a single-chip data memory without byte-lane multiplexing. The 10 ns access time and matching 10 ns write cycle give the controller a 100 MHz window to latch data; at that speed the trace-length matching on the data and address lines matters more than the chip's own timing margin.

The part is sourced through independent distribution — quantities are lot-specific and confirmed at RFQ. For existing BOM lines, the 48-VFBGA (8x9.5 mm) footprint and 3.0–3.6 V supply are the critical dimensions when qualifying a replacement — any alternative must match the ball-out and the voltage window.

Frequently asked questions

Where can I buy CY7C1061DV33-10BV1XI?

This part is obsolete and available through independent surplus channels. Submit a request with your target quantity and target date for a firm quotation.