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Infineon Technologies CY7C10612GN30-10ZSXI — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C10612GN30-10ZSXI 16Mbit Async SRAM, 10 ns, -40°C to 85°C

MPNCY7C10612GN30-10ZSXI
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Infineon CY7C10612GN30-10ZSXI, 16Mbit asynchronous SRAM, 10 ns access time, parallel interface, 2.2V to 3.6V supply, -40°C to 85°C operating temperature, 54-TSOP II package, Tray.

$146.9125Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C10612GN30-10ZSXI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Supply voltage2.2V ~ 3.6V
Memory interfaceParallel
Operating temperature-40°C~85°C(TA)
PackageTray
TechnologySRAM - Asynchronous
Access time10 ns
Memory size16Mbit
Memory formatSRAM
Case54-TSOP (0.400\", 10.16mm Width)
Memory organization1M x 16
Write cycle time - word, page10ns

Product details

For a 50 MHz bus with a 20 ns period, that leaves 10 ns for address setup, hold, and propagation delay through the board trace — tight but workable with controlled impedance and matched trace lengths. If the host controller has a 15 ns or 20 ns access-time requirement, this part meets it with margin; a 8 ns or 7 ns requirement would push the timing closure and may need a faster SRAM.

The 2.2V to 3.6V supply range allows this SRAM to sit on a 3.3V bus with 300 mV of headroom below the absolute maximum, or on a 2.5V rail with 300 mV margin above the minimum. The write cycle time matches the read access at 10 ns, so back-to-back writes at the same speed are supported without dead cycles.

Frequently asked questions

What is the closest pin-compatible alternative to CY7C10612GN30-10ZSXI?

The CY7C10612GN30-10ZSXIT is the tape-and-reel variant of the same die and package — identical pinout, timing, and supply range. For a different density or speed grade within the same family, the base product number CY7C10612 covers multiple speed and temperature options, all sharing the 54-TSOP II footprint.