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Infineon Technologies CY7C10612GN30-10ZSXI — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C10612GN30-10ZSXI Infineon 16Mbit Async SRAM, 10 ns

MPNCY7C10612GN30-10ZSXI
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Infineon CY7C10612GN30-10ZSXI, 16Mbit asynchronous SRAM, 10 ns access time, parallel interface, 2.2V to 3.6V supply, -40°C to 85°C operating temperature, 54-TSOP II package, Tray.

$146.9125Ref. price · indicative, final on quote
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

CY7C10612GN30-10ZSXI Technical Specifications
ParameterValue
Memory typeVolatile
Mounting typeSurface Mount
Voltage2.2V ~ 3.6V
Memory interfaceParallel
Operating temperature-40°C~85°C(TA)
PackageTray
TechnologySRAM - Asynchronous
Access time10 ns
Memory size16Mbit
Memory formatSRAM
Case54-TSOP (0.400\", 10.16mm Width)
Memory organization1M x 16
Write cycle time - word, page10ns

Frequently asked questions

What is the package for CY7C10612GN30-10ZSXI?

It ships in a 54-TSOP II package (0.400-inch body width, 10.16 mm width) on Tray.

What is the memory technology and interface?

It is an asynchronous SRAM with a parallel interface, organized as 1M x 16 bits. No clock is required for read or write operations.