Infineon Technologies
Infineon CY7C1051DV33-10ZSXIT, 8Mbit asynchronous SRAM, 512K x 16 organization, 10 ns access time, 3V to 3.6V supply, -40°C to 85°C industrial temperature, 44-TSOP II package, Tape & Reel.
MOQ 1 · Tape & Reel (TR) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Memory type | Volatile |
| Mounting | Surface Mount |
| Supply voltage | 3V ~ 3.6V |
| Memory interface | Parallel |
| Operating temperature | -40°C ~ 85°C (TA) |
| Package | Tape & Reel (TR) |
| Technology | SRAM - Asynchronous |
| Access time | 10 ns |
| Memory size | 8Mbit |
| Memory format | SRAM |
| Case | 44-TSOP (0.400\", 10.16mm Width) |
| Memory organization | 512K x 16 |
| Write cycle time - word, page | 10ns |
The Infineon CY7C1051DV33-10ZSXIT is an 8Mbit asynchronous SRAM organized as 512K x 16 bits, with a 10 ns access time and a parallel interface. It operates from a 3V to 3.6V supply, making it a direct fit for 3.3V bus systems in networking gear, telecom line cards, industrial controllers, and test equipment that need fast scratchpad or cache memory without refresh overhead.
The 10 ns access time and 10 ns write cycle time allow read or write operations at that speed.
