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Infineon Technologies CY7C1049GN30-10VXI — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1049GN30-10VXI Infineon SRAM, 4 Mbit, 10 ns, 36-SOJ

MPNCY7C1049GN30-10VXI
Active

Infineon CY7C1049GN30-10VXI, asynchronous SRAM, 4 Mbit (512K x 8), parallel interface, 10 ns access time, 2.2 V to 3.6 V supply, -40°C to 85°C, 36-SOJ package, tube.

$7.0800Ref. price · indicative, final on quote
Infineon Technologies CY7C1049GN30-10VXI datasheet (PDF)
Packaging36-BSOJ (0.400", 10.16mm Width)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1049GN30-10VXI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Voltage2.2V ~ 3.6V
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTube
TechnologySRAM - Asynchronous
Access time10 ns
Memory size4Mbit
Memory formatSRAM
Case36-BSOJ (0.400\", 10.16mm Width)
Memory organization512K x 8
Write cycle time - word, page10ns

Product details

10 ns access time — timing margin matters

At 10 ns access time and 10 ns write cycle time, the part provides timing margin for the host processor.

Housed in a 36-SOJ (BSOJ) surface-mount package with 0.400 inch body width and 10.16 mm width. The SOJ footprint is common for SRAMs in this density class — board layout reuses existing patterns from similar Infineon 4 Mbit parts. Supplied in tube; if your pick-and-place prefers tape, the tape-and-reel variant CY7C1049G30-10VXIT is the same die in a different carrier.

Infineon lists this part as Active (current production). ROHS3 compliant.

Frequently asked questions

Is CY7C1049GN30-10VXI a direct replacement for CY7C1049GN30-10VI?

The CY7C1049GN30-10VXI is the lead-free (ROHS3) version of the earlier CY7C1049GN30-10VI. Functionally identical — same 4 Mbit density, 10 ns access, 36-SOJ package. The suffix change reflects the transition to ROHS3 compliance.