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Infineon Technologies CY7C1049B-20VC — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1049B-20VC Cypress 4Mbit Async SRAM, 20 ns, 36-SOJ

MPNCY7C1049B-20VC
Obsolete

Cypress CY7C1049B-20VC, 4Mbit (512K x 8) Asynchronous SRAM, 20 ns access time, 4.5V–5.5V supply, 0°C–70°C, 36-SOJ package, Tube.

Sourced new & surplus through independent channelsAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

CY7C1049B-20VC specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Voltage4.5V ~ 5.5V
Memory interfaceParallel
Operating temperature0°C~70°C(TA)
PackageTube
TechnologySRAM - Asynchronous
Access time20 ns
Memory size4Mbit
Memory formatSRAM
Case36-BSOJ (0.400\", 10.16mm Width)
Memory organization512K x 8
Write cycle time - word, page20ns

Product details

Any stock on the market is surplus, NOS (new old stock), or broker-handled — traceability and date-code consistency matter.

The 20 ns access time means this SRAM can complete a read or write cycle in 20 ns, which supports bus speeds up to roughly 50 MHz without wait states in a synchronous system. For async designs, it sets the window for address-to-data valid — critical for timing closure when the memory sits on a shared bus with a CPU or FPGA that expects fast random access.

512K x 8 organization and supply range

Organized as 512K words of 8 bits each, this part provides a byte-wide data bus — common for 8-bit microcontrollers, boot memory, or FPGA configuration storage.

Package and footprint: 36-SOJ

The 36-SOJ (Small Outline J-lead) package has a body width of 10.16 mm (0.400 inches) and is surface-mount. The J-lead form factor gives a smaller footprint than a DIP but still allows visual inspection of solder joints.

Frequently asked questions

What is the access time of CY7C1049B-20VC?

The access time is 20 ns. Write cycle time (word, page) is also 20 ns.

What voltage does CY7C1049B-20VC use?

The supply voltage range is 4.5V to 5.5V — a 5 V nominal rail.