Infineon CY7C1041GN30-10BVXI, asynchronous SRAM, 4 Mbit (256K x 16), parallel interface, 10 ns access time, 2.2 V to 3.6 V supply, -40°C to 85°C, 48-VFBGA (6x8) tray.
| Parameter | Value |
|---|---|
| Memory type | Volatile |
| Mounting | Surface Mount |
| Voltage | 2.2V ~ 3.6V |
| Memory interface | Parallel |
| Operating temperature | -40°C ~ 85°C (TA) |
| Package | Tray |
| Technology | SRAM - Asynchronous |
| Access time | 10 ns |
| Memory size | 4Mbit |
| Memory format | SRAM |
| Case | 48-VFBGA |
| Memory organization | 256K x 16 |
| Write cycle time - word, page | 10ns |
The Infineon CY7C1041GN30-10BVXI is a 4 Mbit asynchronous SRAM organized as 256K words by 16 bits. The parallel interface keeps the memory map flat — no address multiplexing, no refresh overhead. Supply range spans 2.2 V to 3.6 V. The industrial temperature grade (-40°C to 85°C) suits it for motor drives, outdoor telecom, and factory automation enclosures.
Yes, CY7C1041GN30-10BVXI is ROHS3 compliant, meeting the latest EU RoHS directive requirements.
The memory is organized as 256K words by 16 bits (256K x 16), for a total of 4 Mbit.