CY7C1041G30-10ZSXIT

Infineon Technologies

Infineon CY7C1041G30-10ZSXIT, Asynchronous SRAM, 4 Mbit (256K x 16), Parallel interface, 10 ns access time, 2.2 V to 3.6 V supply, -40°C to 85°C, 44-TSOP II, Tape & Reel.

Infineon Technologies CY7C1041G30-10ZSXIT
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[IN STOCK] In Stock: 10 pcs
$7.40/ pc

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MOQ 1 · Tape & Reel (TR) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

CY7C1041G30-10ZSXIT specifications
Parameter / AttributeSpecification / Value
Memory typeVolatile
MountingSurface Mount
Supply voltage2.2V ~ 3.6V
Memory interfaceParallel
Operating temperature-40°C~85°C(TA)
PackageTape & Reel (TR)
TechnologySRAM - Asynchronous
Access time10 ns
Memory size4Mbit
Memory formatSRAM
Case44-TSOP (0.400\", 10.16mm Width)
Memory organization256K x 16
Write cycle time - word, page10ns

Technical details

10 ns asynchronous SRAM in a 44-TSOP II footprint

The Infineon (formerly Cypress) CY7C1041G30-10ZSXIT is a 4 Mbit asynchronous SRAM organized as 256K words by 16 bits. The 10 ns access time targets high-speed cache, communications buffers, and industrial control systems where deterministic read/write latency matters.

Supply range and bus compatibility

At 3.3 V it interfaces directly with common FPGAs, MCUs, and DSPs; at 2.5 V it matches low-power logic families. The 10 ns write cycle time matches the read access time, so back-to-back read-write sequences run at full bus speed without dead cycles.

CY7C1041G30-10ZSXIT
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