The Infineon CY7C1041G30-10ZSXI is a 4 Mbit asynchronous SRAM organised as 256K x 16, with a 10 ns access time and a 2.2 V to 3.6 V supply range.
10 ns access time — timing margin for the bus
The write cycle time, word and page, also runs at 10 ns.

Infineon CY7C1041G30-10ZSXI, asynchronous SRAM, 4Mbit (256K x 16), 10 ns access time, 2.2V–3.6V supply, parallel interface, -40°C to +85°C, 44-TSOP II, Tray, ROHS3.
| Parameter | Value |
|---|---|
| Memory type | Volatile |
| Mounting | Surface Mount |
| Voltage | 2.2V ~ 3.6V |
| Memory interface | Parallel |
| Operating temperature | -40°C ~ 85°C (TA) |
| Package | Tray |
| Technology | SRAM - Asynchronous |
| Access time | 10 ns |
| Memory size | 4Mbit |
| Memory format | SRAM |
| Case | 44-TSOP (0.400\", 10.16mm Width) |
| Memory organization | 256K x 16 |
| Write cycle time - word, page | 10ns |
The Infineon CY7C1041G30-10ZSXI is a 4 Mbit asynchronous SRAM organised as 256K x 16, with a 10 ns access time and a 2.2 V to 3.6 V supply range.
The write cycle time, word and page, also runs at 10 ns.
The suffix T typically indicates Tape & Reel packaging instead of Tray. The -10ZSXIT variant is the same die, same speed grade, and same temperature range, but supplied in Tape & Reel for automated assembly lines. Check the distributor listing for packaging details.
Within the same base number, the CY7C1041G30-10ZSXA and CY7C1041GN30-10BVXI are functional equivalents with the same 4 Mbit density, 10 ns speed, and 2.2 V–3.6 V supply. The -10BAJXE variant extends the temperature range to 125°C. All are asynchronous SRAM with a parallel interface.
Yes, it is ROHS3 compliant, meeting the latest EU RoHS directive requirements.