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Infineon Technologies CY7C1041G30-10ZSXI — Memory (DRAM / SRAM / Flash / EEPROM)

Infineon CY7C1041G30-10ZSXI SRAM, 4Mbit, 10 ns, 44-TSOP II

MPNCY7C1041G30-10ZSXI
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Infineon CY7C1041G30-10ZSXI, asynchronous SRAM, 4Mbit (256K x 16), 10 ns access time, 2.2V–3.6V supply, parallel interface, -40°C to +85°C, 44-TSOP II, Tray, ROHS3.

$9.2000Ref. price · indicative, final on quote
Packaging44-TSOP (0.400", 10.16mm Width)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1041G30-10ZSXI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Voltage2.2V ~ 3.6V
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTray
TechnologySRAM - Asynchronous
Access time10 ns
Memory size4Mbit
Memory formatSRAM
Case44-TSOP (0.400\", 10.16mm Width)
Memory organization256K x 16
Write cycle time - word, page10ns

Product details

The Infineon CY7C1041G30-10ZSXI is a 4 Mbit asynchronous SRAM organised as 256K x 16, with a 10 ns access time and a 2.2 V to 3.6 V supply range.

10 ns access time — timing margin for the bus

The write cycle time, word and page, also runs at 10 ns.

Frequently asked questions

What is the difference between CY7C1041G30-10ZSXI and CY7C1041G30-10ZSXIT?

The suffix T typically indicates Tape & Reel packaging instead of Tray. The -10ZSXIT variant is the same die, same speed grade, and same temperature range, but supplied in Tape & Reel for automated assembly lines. Check the distributor listing for packaging details.

What are equivalent or replacement parts for CY7C1041G30-10ZSXI?

Within the same base number, the CY7C1041G30-10ZSXA and CY7C1041GN30-10BVXI are functional equivalents with the same 4 Mbit density, 10 ns speed, and 2.2 V–3.6 V supply. The -10BAJXE variant extends the temperature range to 125°C. All are asynchronous SRAM with a parallel interface.

Is CY7C1041G30-10ZSXI RoHS compliant?

Yes, it is ROHS3 compliant, meeting the latest EU RoHS directive requirements.