10 ns async SRAM for cache-tag and high-speed buffer duty
The CY7C1041G30-10BVXIT: 4 Mbit asynchronous SRAM organized 256K x 16, 10 ns access time, 2.2 V to 3.6 V supply. 48-VFBGA (6x8 mm), -40°C to 85°C.

Infineon CY7C1041G30-10BVXIT, asynchronous SRAM, 4 Mbit organized 256K x 16, 10 ns access time, parallel interface, 2.2 V to 3.6 V supply, -40°C to 85°C, 48-VFBGA (6x8 mm), Tape & Reel.
| Parameter | Value |
|---|---|
| Memory type | Volatile |
| Mounting type | Surface Mount |
| Voltage | 2.2V ~ 3.6V |
| Memory interface | Parallel |
| Operating temperature | -40°C~85°C(TA) |
| Package | Tape & Reel (TR) |
| Technology | SRAM - Asynchronous |
| Access time | 10 ns |
| Memory size | 4Mbit |
| Memory format | SRAM |
| Case | 48-VFBGA |
| Memory organization | 256K x 16 |
| Write cycle time - word, page | 10ns |
The CY7C1041G30-10BVXIT: 4 Mbit asynchronous SRAM organized 256K x 16, 10 ns access time, 2.2 V to 3.6 V supply. 48-VFBGA (6x8 mm), -40°C to 85°C.
It is a 4 Mbit asynchronous SRAM organized 256K x 16 with a 10 ns access time, used for cache-tag storage, high-speed data buffers, and DSP working memory in networking and industrial equipment.
It is supplied in a 48-VFBGA (6x8 mm) package, Tape & Reel, surface mount.