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Infineon Technologies CY7C1041G30-10BVXI — Memory (DRAM / SRAM / Flash / EEPROM)

CY7C1041G30-10BVXI Infineon SRAM, 4 Mbit Async, 10 ns

MPNCY7C1041G30-10BVXI
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Infineon CY7C1041G30-10BVXI, 4 Mbit asynchronous SRAM, 256K x 16, parallel interface, 10 ns access time, 2.2 V to 3.6 V supply, -40°C to 85°C, 48-VFBGA (6x8), Tray.

$7.0800Ref. price · indicative, final on quote
Packaging48-VFBGA
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

CY7C1041G30-10BVXI specifications
ParameterValue
Memory typeVolatile
MountingSurface Mount
Voltage2.2V ~ 3.6V
Memory interfaceParallel
Operating temperature-40°C ~ 85°C (TA)
PackageTray
TechnologySRAM - Asynchronous
Access time10 ns
Memory size4Mbit
Memory formatSRAM
Case48-VFBGA
Memory organization256K x 16
Write cycle time - word, page10ns

Product details

4 Mbit asynchronous SRAM in a 48-VFBGA — what this part delivers

The Infineon CY7C1041G30-10BVXI is a 4 Mbit asynchronous SRAM organized as 256K x 16 bits, accessed through a parallel interface. Supply voltage spans 2.2 V to 3.6 V.

Frequently asked questions

What is the access time of CY7C1041G30-10BVXI?

The access time is 10 ns, which supports a 100 MHz bus cycle without wait states.

Is CY7C1041G30-10BVXI compatible with 3.3V systems?

Yes. The supply range is 2.2 V to 3.6 V, so it operates directly on a 3.3 V rail.

What is the difference between CY7C1041G30-10BVXI and CY7C1041G30-10BVXIT?

The suffix 'T' typically indicates Tape & Reel packaging instead of Tray. The silicon is identical; the difference is only the shipping medium.

Where can I buy CY7C1041G30-10BVXI?

This part is sourced to order through independent distribution. Submit an RFQ for current availability and pricing.